BFT25A,215
vs
BFG590W/X
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
| Part Package Code |
TO-236
|
|
| Package Description |
PLASTIC PACKAGE-3
|
,
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
SOT23
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00
|
|
| Date Of Intro |
1992-11-01
|
|
| Samacsys Manufacturer |
NXP
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Collector Current-Max (IC) |
0.0065 A
|
0.2 A
|
| Collector-Base Capacitance-Max |
0.45 pF
|
|
| Collector-Emitter Voltage-Max |
5 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
60
|
| Highest Frequency Band |
L BAND
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.032 W
|
|
| Power Dissipation-Max (Abs) |
0.032 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
CECC
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
5000 MHz
|
|
| Base Number Matches |
1
|
2
|
|
|
|
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