BFT25-T vs BFT25TRL13 feature comparison

BFT25-T NXP Semiconductors

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BFT25TRL13 YAGEO Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS PHILIPS COMPONENTS
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.0065 A 0.0065 A
Collector-Base Capacitance-Max 0.6 pF
Collector-Emitter Voltage-Max 5 V 5 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 20 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.03 W
Qualification Status Not Qualified Not Qualified
Reference Standard CECC
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 2300 MHz 2300 MHz
Base Number Matches 1 2

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Compare BFT25TRL13 with alternatives