BFR35AP
vs
BFR183
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
SIEMENS A G
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.045 A
0.065 A
Collector-Emitter Voltage-Max
15 V
12 V
Configuration
SINGLE
SINGLE
Number of Elements
1
1
Polarity/Channel Type
NPN
NPN
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
5000 MHz
8000 MHz
Base Number Matches
3
2
Rohs Code
Package Description
SMALL OUTLINE, R-PDSO-G3
Collector-Base Capacitance-Max
0.6 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e0
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Power Dissipation-Max (Abs)
0.28 W
Power Gain-Min (Gp)
18.5 dB
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
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