BFR193E6327
vs
BFG520W
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
PHILIPS SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.08 A
|
0.07 A
|
| Collector-Base Capacitance-Max |
1 pF
|
|
| Collector-Emitter Voltage-Max |
12 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
COMMERCIAL
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
8000 MHz
|
|
| Base Number Matches |
3
|
2
|
| ECCN Code |
|
EAR99
|
| DC Current Gain-Min (hFE) |
|
60
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.5 W
|
|
|
|