BFQ236ATRL13
vs
BFQ233A
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.3 A
|
0.3 A
|
| Collector-Base Capacitance-Max |
1.8 pF
|
|
| Collector-Emitter Voltage-Max |
95 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
20
|
| JESD-30 Code |
R-PDSO-G4
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
800 MHz
|
800 MHz
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
3 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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