BFG67-T
vs
BFG67
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
TELEFUNKEN MICROELECTRONICS GMBH
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.05 A
|
0.05 A
|
| Collector-Emitter Voltage-Max |
10 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
60
|
65
|
| Highest Frequency Band |
L BAND
|
|
| JESD-30 Code |
R-PDSO-G4
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.3 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
CECC
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
8000 MHz
|
|
| Base Number Matches |
1
|
5
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
0.2 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare BFG67-T with alternatives