BFG425W vs BFU630F feature comparison

BFG425W Philips Semiconductors

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BFU630F NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer PHILIPS SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.03 A 0.03 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50
JESD-609 Code e3
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.135 W
Surface Mount YES YES
Terminal Finish MATTE TIN
Base Number Matches 2 1
Package Description PLASTIC, FLAT PACK-4
Pin Count 4
HTS Code 8541.21.00
Additional Feature LOW NOISE
Collector-Emitter Voltage-Max 5.5 V
Highest Frequency Band KU BAND
JESD-30 Code R-PDSO-F4
Moisture Sensitivity Level 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 21000 MHz

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