BFG35-T vs BFP540ESDE6433 feature comparison

BFG35-T NXP Semiconductors

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BFP540ESDE6433 Infineon Technologies AG

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code SC-73 SOT
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Pin Count 4 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Case Connection COLLECTOR EMITTER
Collector Current-Max (IC) 0.15 A 0.08 A
Collector-Emitter Voltage-Max 18 V 4 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 25 50
Highest Frequency Band S BAND L BAND
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard CECC
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 4000 MHz 34000 MHz
Base Number Matches 1 1
Rohs Code Yes
Additional Feature HIGH RELIABILITY, LOW NOISE
Collector-Base Capacitance-Max 0.24 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.25 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BFG35-T with alternatives

Compare BFP540ESDE6433 with alternatives