BFG35
vs
NE85634-T1
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEC ELECTRONICS AMERICA INC
|
| Part Package Code |
SC-73
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
PLASTIC PACKAGE-3
|
| Pin Count |
4
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00
|
|
| Samacsys Manufacturer |
NXP
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
0.15 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
18 V
|
12 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
25
|
|
| Highest Frequency Band |
S BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-PDSO-G4
|
R-PSSO-F3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
CECC
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
DUAL
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
4000 MHz
|
6500 MHz
|
| Base Number Matches |
8
|
2
|
| Additional Feature |
|
LOW NOISE
|
| Collector-Base Capacitance-Max |
|
1 pF
|
|
|
|
Compare BFG35 with alternatives
Compare NE85634-T1 with alternatives