BF998TRL13 vs 3SK249 feature comparison

BF998TRL13 NXP Semiconductors

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3SK249 Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 12 V 12.5 V
Drain Current-Max (ID) 0.03 A 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Pin Count 4
Additional Feature LOW NOISE
Feedback Cap-Max (Crss) 0.04 pF
Power Gain-Min (Gp) 18 dB

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