BF998TRL vs BF988 feature comparison

BF998TRL NXP Semiconductors

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BF988 Siemens

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 12 V 12 V
Drain Current-Max (ID) 0.03 A 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4 O-PRDB-F4
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE DISK BUTTON
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING FLAT
Terminal Position DUAL RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Power Dissipation-Max (Abs) 0.2 W
Power Gain-Min (Gp) 20 dB

Compare BF998TRL with alternatives

Compare BF988 with alternatives