BF998
vs
3SK199
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
SIEMENS A G
|
TOSHIBA CORP
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
LOW NOISE
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
12 V
|
13.5 V
|
Drain Current-Max (ID) |
0.03 A
|
0.03 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DUAL GATE, DEPLETION MODE
|
DUAL GATE, DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
125 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.2 W
|
|
Power Gain-Min (Gp) |
20 dB
|
18 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
3
|
Pbfree Code |
|
No
|
Package Description |
|
SMALL OUTLINE, R-PDSO-G4
|
Pin Count |
|
4
|
Feedback Cap-Max (Crss) |
|
0.03 pF
|
Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare BF998 with alternatives
Compare 3SK199 with alternatives