BF822,215
vs
BF822W-T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
TO-236
Package Description
PLASTIC, SST3, SMD, 3 PIN
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Collector Current-Max (IC)
0.05 A
0.05 A
Collector-Base Capacitance-Max
1.6 pF
1.6 pF
Collector-Emitter Voltage-Max
250 V
250 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
50
50
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.31 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
60 MHz
60 MHz
VCEsat-Max
0.6 V
0.6 V
Base Number Matches
2
1
Compare BF822,215 with alternatives
Compare BF822W-T with alternatives