BF821/T3
vs
BF821T/R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NEXPERIA
PHILIPS SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
,
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Total Weight
7.56723
8
Category CO2 Kg
8.8
8.54
CO2
66.59162400000001
68.32
EU RoHS Version
RoHS 2 (2015/863/EU)
RoHS 2 (2015/863/EU)
Candidate List Date
2023-01-17
CAS Accounted for Wt
98
89
CA Prop 65 Presence
YES
YES
CA Prop 65 CAS Numbers
7440-48-4, 7440-02-0, 1333-86-4, 7439-92-1
7440-48-4, 7440-02-0
EFUP
e
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
CMRT V5.01
FMD
Collector Current-Max (IC)
0.05 A
0.05 A
Collector-Emitter Voltage-Max
300 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
50
50
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Surface Mount
YES
YES
Terminal Finish
TIN
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
60 MHz
60 MHz
Base Number Matches
2
3
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.31 W
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