BF771E6327 vs BFG520W feature comparison

BF771E6327 Infineon Technologies AG

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BFG520W NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon NXP
Collector Current-Max (IC) 0.08 A 0.07 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50 60
JESD-30 Code R-PDSO-G3 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 4
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.58 W 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 8000 MHz 9000 MHz
Base Number Matches 2 7
Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection COLLECTOR
Highest Frequency Band L BAND
Time@Peak Reflow Temperature-Max (s) 30

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