BF510,215
vs
BF510T/R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
TO-236
Package Description
PLASTIC, SMD, SST3, 3 PIN
PLASTIC, SMD, SST3, 3 PIN
Pin Count
3
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00
Date Of Intro
1993-07-01
Samacsys Manufacturer
NXP
Additional Feature
LOW NOISE
LOW NOISE
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
0.03 A
0.03 A
FET Technology
JUNCTION
JUNCTION
Feedback Cap-Max (Crss)
0.4 pF
0.4 pF
Highest Frequency Band
VERY HIGH FREQUENCY BAND
VERY HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.25 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
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