BF241D-AMMO
vs
MRF951
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MOTOROLA INC
|
| Package Description |
CYLINDRICAL, O-PBCY-W3
|
DISK BUTTON, O-PRDB-F4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.025 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
0.5 pF
|
1 pF
|
| Collector-Emitter Voltage-Max |
40 V
|
10 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
35
|
50
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-W3
|
O-PRDB-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
DISK BUTTON
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
FLAT
|
| Terminal Position |
BOTTOM
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
150 MHz
|
8000 MHz
|
| Base Number Matches |
1
|
6
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.21.00.75
|
| Additional Feature |
|
LOW NOISE
|
| Highest Frequency Band |
|
L BAND
|
| JESD-609 Code |
|
e0
|
| Power Dissipation Ambient-Max |
|
0.475 W
|
| Power Dissipation-Max (Abs) |
|
0.475 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare BF241D-AMMO with alternatives
Compare MRF951 with alternatives