BF1100WRT/R
vs
BF1100TRL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G4
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Case Connection
SOURCE
SOURCE
Configuration
COMPLEX
COMPLEX
DS Breakdown Voltage-Min
14 V
14 V
Drain Current-Max (ID)
0.03 A
0.03 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
0.035 pF
0.035 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e3
e3
Number of Elements
2
2
Number of Terminals
4
4
Operating Mode
DUAL GATE, ENHANCEMENT MODE
DUAL GATE, ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Compare BF1100WRT/R with alternatives
Compare BF1100TRL with alternatives