BF1100WR-TAPE-7
vs
3SK295
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
HITACHI LTD
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
14 V
|
|
Drain Current-Max (ID) |
0.03 A
|
0.025 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
0.035 pF
|
0.03 pF
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DUAL GATE, ENHANCEMENT MODE
|
DUAL GATE, DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pin Count |
|
4
|
Power Dissipation-Max (Abs) |
|
0.15 W
|
Power Gain-Min (Gp) |
|
16 dB
|
|
|
|
Compare BF1100WR-TAPE-7 with alternatives
Compare 3SK295 with alternatives