BDX53
vs
M54526FP
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
MITSUBISHI ELECTRIC CORP
|
| Part Package Code |
SFM
|
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
SMALL OUTLINE, R-PDSO-G16
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
8 A
|
0.5 A
|
| Collector-Emitter Voltage-Max |
45 V
|
50 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
COMPLEX
|
| DC Current Gain-Min (hFE) |
750
|
1000
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PDSO-G16
|
| Number of Elements |
1
|
7
|
| Number of Terminals |
3
|
16
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
60 W
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
2 V
|
|
| Base Number Matches |
35
|
1
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare BDX53 with alternatives
Compare M54526FP with alternatives