BDW83C vs BDV65B feature comparison

BDW83C STMicroelectronics

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BDV65B STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code TO-218
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 15 A 12 A
Collector-Emitter Voltage-Max 100 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100 1000
JEDEC-95 Code TO-218 TO-218
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 130 W 125 W
Power Dissipation-Max (Abs) 3.5 W 125 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 4 V 2 V
Base Number Matches 1 1

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