BDV64 vs BDV64 feature comparison

BDV64 Central Semiconductor Corp

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BDV64 STMicroelectronics

Buy Now Datasheet
Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Central Semiconductor
Case Connection COLLECTOR
Collector Current-Max (IC) 12 A 12 A
Collector-Emitter Voltage-Max 60 V 60 V
Configuration DARLINGTON DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 1000 1000
JEDEC-95 Code TO-218 TO-218
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 125 W 125 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 60 MHz 0.1 MHz
Base Number Matches 6 3
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 125 W
VCEsat-Max 2 V

Compare BDV64 with alternatives

Compare BDV64 with alternatives