BDT60 vs 2N5656 feature comparison

BDT60 Bourns Inc

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2N5656 STMicroelectronics

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer BOURNS INC STMICROELECTRONICS
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR ISOLATED
Collector Current-Max (IC) 4 A 0.5 A
Collector-Emitter Voltage-Max 60 V 300 V
Configuration DARLINGTON SINGLE
DC Current Gain-Min (hFE) 750 5
JEDEC-95 Code TO-220AB TO-126
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
HTS Code 8541.29.00.95
Collector-Base Capacitance-Max 25 pF
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Terminal Finish TIN LEAD
Transistor Application AMPLIFIER
Transition Frequency-Nom (fT) 10 MHz
VCEsat-Max 10 V

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