BD682TG
vs
JANTX2N5666S
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
TO-225
|
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
TO-5, 2 PIN
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
77-09
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
4 A
|
5 A
|
| Collector-Emitter Voltage-Max |
100 V
|
200 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
750
|
15
|
| JEDEC-95 Code |
TO-225AA
|
TO-205AD
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBCY-W3
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
40 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin (Sn)
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.29.00.95
|
| Collector-Base Capacitance-Max |
|
120 pF
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation Ambient-Max |
|
2.5 W
|
| Reference Standard |
|
MIL-PRF-19500
|
| Turn-off Time-Max (toff) |
|
1500 ns
|
| Turn-on Time-Max (ton) |
|
250 ns
|
| VCEsat-Max |
|
0.4 V
|
|
|
|
Compare BD682TG with alternatives
Compare JANTX2N5666S with alternatives