BD675
vs
2N6300E3
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
MICROSEMI CORP
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
TO-66, 2 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Collector Current-Max (IC) |
4 A
|
8 A
|
| Collector-Emitter Voltage-Max |
45 V
|
60 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
750
|
100
|
| JEDEC-95 Code |
TO-225AA
|
TO-213AA
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBFM-P2
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
40 W
|
|
| Power Dissipation-Max (Abs) |
40 W
|
75 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
10 MHz
|
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Case Connection |
|
COLLECTOR
|
|
|
|
Compare BD675 with alternatives
Compare 2N6300E3 with alternatives