BD675 vs JAN2N6301 feature comparison

BD675 Central Semiconductor Corp

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JAN2N6301 Silicon Transistor Corporation

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP SILICON TRANSISTOR CORP
Part Package Code SIP
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 4 A 8 A
Collector-Emitter Voltage-Max 45 V 80 V
Configuration DARLINGTON DARLINGTON
DC Current Gain-Min (hFE) 750 750
JEDEC-95 Code TO-126 TO-213
JESD-30 Code R-PSFM-T3 O-MBFM-P2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 200 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 40 W 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE PIN/PEG
Terminal Position SINGLE BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 1 MHz 4 MHz
VCEsat-Max 2.8 V
Base Number Matches 6 1
Case Connection COLLECTOR
Reference Standard MIL

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