BD234 vs JAN2N5666S feature comparison

BD234 Toshiba America Electronic Components

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JAN2N5666S Semicoa Semiconductors

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Rohs Code No No
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TOSHIBA CORP SEMICOA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.000003 A 5 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 5
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Temperature-Max 150 °C 200 °C
Polarity/Channel Type PNP NPN
Power Dissipation-Max (Abs) 25 W 15 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Transition Frequency-Nom (fT) 3 MHz
Base Number Matches 21 7
Package Description HERMETIC SEALED, METAL CAN-3
Pin Count 3
Case Connection COLLECTOR
Collector-Emitter Voltage-Max 200 V
JESD-30 Code O-MBCY-W3
Number of Terminals 3
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Qualification Status Qualified
Reference Standard MIL-19500/455
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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