BCX68E6327
vs
2SD999-AZ
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
NEC ELECTRONICS CORP
|
| Package Description |
SMALL OUTLINE, R-PSSO-F3
|
SMALL OUTLINE, R-PSSO-F3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
20 V
|
25 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
85
|
50
|
| JESD-30 Code |
R-PSSO-F3
|
R-PSSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
130 MHz
|
| VCEsat-Max |
0.5 V
|
|
| Base Number Matches |
2
|
2
|
| Pin Count |
|
3
|
| JESD-609 Code |
|
e6
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
TIN BISMUTH
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare 2SD999-AZ with alternatives