BCW66FE6327
vs
PN4122
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SIEMENS A G
NATIONAL SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Collector Current-Max (IC)
0.8 A
0.1 A
Collector-Emitter Voltage-Max
45 V
40 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
35
30
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
140 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
NPN
PNP
Power Dissipation Ambient-Max
0.33 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
170 MHz
450 MHz
VCEsat-Max
0.7 V
0.3 V
Base Number Matches
1
1
Rohs Code
Additional Feature
HIGH SPEED SATURATED SWITCHING
JEDEC-95 Code
TO-92
JESD-609 Code
e0
Power Dissipation-Max (Abs)
0.625 W
Terminal Finish
Tin/Lead (Sn/Pb)
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
150 ns
Turn-on Time-Max (ton)
40 ns
Compare BCW66FE6327 with alternatives
Compare PN4122 with alternatives