BCW60FN vs PUMB11,115 feature comparison

BCW60FN Infineon Technologies AG

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PUMB11,115 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Part Package Code SOT-23 TSSOP
Package Description SMALL OUTLINE, R-PDSO-G3 PLASTIC, SC-88, 6 PIN
Pin Count 3 6
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 32 V 50 V
Configuration SINGLE SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 30
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G6
Moisture Sensitivity Level 1 1
Number of Elements 1 2
Number of Terminals 3 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN PNP
Power Dissipation-Max (Abs) 0.31 W 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 3 2
Manufacturer Package Code SOT363
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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