BCW60B
vs
BCW60C/T3
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.75
|
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
32 V
|
32 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
70
|
90
|
JEDEC-95 Code |
TO-236
|
TO-236AB
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
0.33 W
|
|
Power Dissipation-Max (Abs) |
0.3 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin (Sn)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
VCEsat-Max |
0.55 V
|
0.55 V
|
Base Number Matches |
4
|
1
|
Part Package Code |
|
SOT-23
|
Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count |
|
3
|
Additional Feature |
|
LOW NOISE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Turn-off Time-Max (toff) |
|
800 ns
|
Turn-on Time-Max (ton) |
|
150 ns
|
|
|
|
Compare BCW60B with alternatives
Compare BCW60C/T3 with alternatives