BCW30
vs
BCW30TRL13
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
215
|
215
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Surface Mount |
YES
|
YES
|
| Base Number Matches |
29
|
2
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Collector-Emitter Voltage-Max |
|
32 V
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Tin (Sn)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
150 MHz
|
| VCEsat-Max |
|
0.3 V
|
|
|
|
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