BCR555E6327HTSA1
vs
PDTB123YUF
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
End Of Life
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NEXPERIA
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
6 Weeks
|
Samacsys Manufacturer |
Infineon
|
Nexperia
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO 0.22
|
BUILT IN BIAS RESISTANCE RATIO IS 4.55
|
Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
70
|
70
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
PNP
|
PNP
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
150 MHz
|
140 MHz
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
SC-70
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
SOT323
|
Reference Standard |
|
AEC-Q101; IEC-60134
|
|
|
|
Compare BCR555E6327HTSA1 with alternatives
Compare PDTB123YUF with alternatives