BCR533
vs
RN2115FV
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
TOSHIBA CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTANCE RATIO IS 4.54
Collector Current-Max (IC)
0.5 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
30
JESD-30 Code
R-PDSO-G3
R-PDSO-F3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
PNP
Power Dissipation Ambient-Max
0.33 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
200 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
1
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
0.15 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BCR533 with alternatives
Compare RN2115FV with alternatives