BCR198SH6327XTSA1 vs RN2609(TE85L) feature comparison

BCR198SH6327XTSA1 Infineon Technologies AG

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RN2609(TE85L) Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 39 Weeks
Samacsys Manufacturer Infineon
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 2.14
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP PNP
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 190 MHz 200 MHz
Base Number Matches 1 3
Pin Count 6
Qualification Status Not Qualified

Compare BCR198SH6327XTSA1 with alternatives

Compare RN2609(TE85L) with alternatives