BCR198S
vs
RN1302
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
TOSHIBA CORP
Package Description
SMALL OUTLINE, R-PDSO-G6
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
8541.21.00.75
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.07 A
Collector-Emitter Voltage-Max
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Number of Terminals
6
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
PNP
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
190 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
1
Rohs Code
Part Package Code
SC-70
Pin Count
3
Samacsys Manufacturer
Toshiba
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BCR198S with alternatives
Compare RN1302 with alternatives