BCR192T vs PDTA124EM,315 feature comparison

BCR192T Infineon Technologies AG

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PDTA124EM,315 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Part Package Code SC-75 DFN
Package Description SMALL OUTLINE, R-PDSO-G3 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 2.14 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 60
JESD-30 Code R-PDSO-G3 R-PBCC-N3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Terminal Form GULL WING NO LEAD
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz
Base Number Matches 1 2
Manufacturer Package Code SOT883
Factory Lead Time 4 Weeks
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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Compare PDTA124EM,315 with alternatives