BCR185WE6327HTSA1 vs RN2209(TPE4) feature comparison

BCR185WE6327HTSA1 Infineon Technologies AG

Buy Now Datasheet

RN2209(TPE4) Toshiba America Electronic Components

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTOR RATIO IS 0.468
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JESD-30 Code R-PDSO-G3 R-PSIP-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Base Number Matches 1 1
Pin Count 3
Collector-Base Capacitance-Max 6 pF
Operating Temperature-Max 150 °C
VCEsat-Max 0.3 V

Compare BCR185WE6327HTSA1 with alternatives

Compare RN2209(TPE4) with alternatives