BCR185W vs PDTD114ET feature comparison

BCR185W Infineon Technologies AG

Buy Now Datasheet

PDTD114ET Philips Semiconductors

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code End Of Life Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG PHILIPS SEMICONDUCTORS
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT323
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.5 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 56
JESD-30 Code R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz
Base Number Matches 2 3
Power Dissipation-Max (Abs) 0.25 W

Compare BCR185W with alternatives