BCR166W
vs
MUN5137DW1T1G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
ONSEMI
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 10
BUILT-IN BIAS RESISTOR RATIO IS 2.15
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
80
JESD-30 Code
R-PDSO-G3
R-PDSO-G6
Number of Elements
1
2
Number of Terminals
3
6
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
160 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
1
Pbfree Code
Part Package Code
SC-88/SC70-6/SOT-363 6 LEAD
Package Description
CASE 419B-02, SC-88, 6 PIN
Pin Count
6
Manufacturer Package Code
419B-02
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
0.385 W
Terminal Finish
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
30
Compare BCR166W with alternatives
Compare MUN5137DW1T1G with alternatives