BCR158E6327HTSA1 vs RN2009(TPE2) feature comparison

BCR158E6327HTSA1 Infineon Technologies AG

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RN2009(TPE2) Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.3636 BUILT-IN BIAS RESISTOR RATIO IS 2.14
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Base Number Matches 1 1
Package Description CYLINDRICAL, O-PBCY-T3
JEDEC-95 Code TO-92

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