Findchips: Compare BCR135W vs PDTA144TM,315

BCR135W vs PDTA144TM,315 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Transferred	Transferred
Ihs Manufacturer	SIEMENS A G	NXP SEMICONDUCTORS
Package Description	SMALL OUTLINE, R-PDSO-G3	1 X 0.60 MM, 0.50 MM HEIGHT, LEAD LESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
Reach Compliance Code	unknown	compliant
ECCN Code	EAR99	EAR99
HTS Code	8541.21.00.75
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR
Collector Current-Max (IC)	0.1 A	0.1 A
Collector-Emitter Voltage-Max	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	70	100
JESD-30 Code	R-PDSO-G3	R-PBCC-N3
Number of Elements	1	1
Number of Terminals	3	3
Operating Temperature-Max	150 °C	150 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	CHIP CARRIER
Polarity/Channel Type	NPN	PNP
Power Dissipation Ambient-Max	0.25 W
Qualification Status	Not Qualified	Not Qualified
Surface Mount	YES	YES
Terminal Form	GULL WING	NO LEAD
Terminal Position	DUAL	BOTTOM
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Transition Frequency-Nom (fT)	150 MHz
VCEsat-Max	0.3 V
Base Number Matches	3	1
Rohs Code		Yes
Part Package Code		DFN
Pin Count		3
Manufacturer Package Code		SOT883
Factory Lead Time		4 Weeks
Case Connection		COLLECTOR
JESD-609 Code		e3
Moisture Sensitivity Level		1
Peak Reflow Temperature (Cel)		260
Power Dissipation-Max (Abs)		0.25 W
Terminal Finish		TIN
Time@Peak Reflow Temperature-Max (s)		30
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors