BCR108WE6433 vs BCR108WE6327HTSA1 feature comparison

BCR108WE6433 Infineon Technologies AG

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BCR108WE6327HTSA1 Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.3636 BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 170 MHz 170 MHz
Base Number Matches 1 1
Pbfree Code Yes
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

Compare BCR108WE6433 with alternatives

Compare BCR108WE6327HTSA1 with alternatives