BCR108S
vs
BCR108SH6433XTMA1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 21.364
BUILT-IN BIAS RESISTOR RATIO IS 21.36
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
70
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
170 MHz
170 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
1
Rohs Code
Package Description
SMALL OUTLINE, R-PDSO-G6
Samacsys Manufacturer
Infineon
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BCR108S with alternatives
Compare BCR108SH6433XTMA1 with alternatives