BCR108
vs
KSR1113MTF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
0.2 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
170 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
1
Package Description
SMALL OUTLINE, R-PDSO-G3
Compare BCR108 with alternatives
Compare KSR1113MTF with alternatives