BCP5616QTC vs BCP56-10E6433 feature comparison

BCP5616QTC Diodes Incorporated

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BCP56-10E6433 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 1 A
Collector-Base Capacitance-Max 25 pF
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 25 63
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 2 W 1.5 W
Reference Standard AEC-Q101; IATF 16949
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 150 MHz 100 MHz
VCEsat-Max 0.5 V
Base Number Matches 1 2
Package Description SMALL OUTLINE, R-PDSO-G4
Moisture Sensitivity Level 1
Qualification Status Not Qualified

Compare BCP5616QTC with alternatives

Compare BCP56-10E6433 with alternatives