We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

BCP53-10TA vs BCP53-10,115 feature comparison

BCP53-10TA Diodes Incorporated

Buy Now Datasheet

BCP53-10,115 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Active Transferred
Ihs Manufacturer ZETEX PLC NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown compliant
Factory Lead Time 8 Weeks
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 63 63
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 125 MHz 145 MHz
Base Number Matches 2 2
Rohs Code Yes
Part Package Code SC-73
Pin Count 4
Manufacturer Package Code SOT223
ECCN Code EAR99
HTS Code 8541.29.00.75
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 1.5 W
Power Dissipation-Max (Abs) 1.5 W
Reference Standard AEC-Q101; IEC-60134
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistors » Power Bipolar Transistors
Transistors » Power Bipolar Transistors

Compare BCP53-10TA with alternatives

Compare BCP53-10,115 with alternatives