BCM847DS/T2
vs
BCM847DS
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
|
| Case Connection |
ISOLATED
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
45 V
|
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
|
| DC Current Gain-Min (hFE) |
200
|
200
|
| JESD-30 Code |
R-PDSO-G6
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
6
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
250 MHz
|
100 MHz
|
| Base Number Matches |
2
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.38 W
|
|
|
|
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