BCH817-16LT1G
vs
BC817-16-B0RFG
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
SOT-23, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2020-02-18
|
|
| Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
| Collector-Emitter Voltage-Max |
45 V
|
45 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
100
|
100
|
| JEDEC-95 Code |
TO-236
|
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.3 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.7 V
|
0.7 V
|
| Base Number Matches |
2
|
1
|
| HTS Code |
|
8541.21.00.95
|
| Collector-Base Capacitance-Max |
|
10 pF
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation Ambient-Max |
|
0.3 W
|
| Terminal Finish |
|
MATTE TIN OVER NICKEL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BCH817-16LT1G with alternatives
Compare BC817-16-B0RFG with alternatives