BC859TR
vs
BC859-TAPE-7
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
NXP SEMICONDUCTORS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
Candidate List Date
2020-01-16
SVHC Over MCV
7439-92-1
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.22
Additional Feature
LOW NOISE
LOW NOISE
Collector-Base Capacitance-Max
4.5 pF
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
125
125
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
150 MHz
150 MHz
VCEsat-Max
0.65 V
0.65 V
Base Number Matches
2
1
Package Description
SMALL OUTLINE, R-PDSO-G3
Collector Current-Max (IC)
0.1 A
Operating Temperature-Max
150 °C
Transistor Application
AMPLIFIER
Compare BC859TR with alternatives
Compare BC859-TAPE-7 with alternatives